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publication number 27546 revision a amendment 7 issue date february 23, 2009 am29sl800d am29sl800d cover sheet data sheet (retired product) this product has been retired and is not recommended for designs. for new and current designs, s29as008j supercedes am29sl800d. this is the factory-recommende d migration path. please refer to the s2 9as008j data sheet for specifications and ordering information. availability of this document is retained for reference and historical purposes only. the following document contains info rmation on spansion memory products. continuity of specifications there is no change to this data sheet as a result of offering the device as a spansi on product. any changes that have been made are the result of normal data sheet improvem ent and are noted in the document revision summary. for more information please contact your local sales office for additional information about spansion memory solutions.
2 am29sl800d 27546_a7 february 23, 2009 data sheet (retired product) this page left intentionally blank.
data sheet this data sheet states amd?s current specifications rega rding the products described herein. this data sheet may be revised by subsequent versions or modifications due to changes in technical specifications. publication# 27546 rev: a amendment/ 7 issue date: february 23, 2009 am29sl800d 8 megabit (1 m x 8-bit/512 k x 16-bit) cmos 1.8 volt-only super low voltage flash memory distinctive characteristics ? single power supply operation ? 1.65 to 2.2 v for read, program, and erase operations ? ideal for battery-powered applications ? manufactured on 0.23 m process technology ? compatible with 0.32 m am29sl800c device ? high performance ? access times as fast as 90 ns ? ultra low power consumption (typical values at 5 mhz) ? 0.2 a automatic sleep mode current ? 0.2 a standby mode current ? 5 ma read current ? 15 ma program/erase current ? flexible sector architecture ? one 16 kbyte, two 8 kbyte, one 32 kbyte, and fifteen 64 kbyte sectors (byte mode) ? one 8 kword, two 4 kword, one 16 kword, and fifteen 32 kword sectors (word mode) ? supports full chip erase ? sector protection features: a hardware method of locking a sector to prevent any program or erase operations within that sector sectors can be locked in-system or via programming equipment temporary sector unprotect feature allows code changes in previously locked sectors ? unlock bypass program command ? reduces overall programming time when issuing multiple program command sequences ? top or bottom boot block configurations available ? embedded algorithms ? embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors ? embedded program algorithm automatically writes and verifies data at specified addresses ? minimum 1,000,000 erase cycle guarantee per sector ? 20-year data retention at 125 c ? package option ? 48-pin tsop ? 48-ball fbga ? compatibility with jedec standards ? pinout and software compatible with single- power supply flash ? superior inadvertent write protection ? data# polling and toggle bits ? provides a software method of detecting program or erase operation completion ? ready/busy# pin (ry/by#) ? provides a hardware method of detecting program or erase cycle completion ? erase suspend/erase resume ? suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ? hardware reset pin (reset#) ? hardware method to reset the device to reading array data this product has been retired and is not recommended for designs. for new and current designs, s29as008j super- cedes am29sl800d. this is the factory-recommended migration path. please refer to the s29as008j data sheet for specifications and ordering informatio n. availability of this document is re tained for reference and historical pur- poses only.
data sheet 2 am29sl800d 27546a7 february 23, 2009 general description the am29sl800d is an 8 mbit, 1.8 v volt-only flash- memory organized as 1,048,576 bytes or 524,288 words. the device is offered in 48-pin tsop and 48- ball fbga packages. the word-wide data (x16) appears on dq15?dq0; the byte-wide (x8) data appears on dq7?dq0. this device is designed to be programmed and erased in-system with a single 1.8 volt v cc supply. no v pp is for write or erase operations. the device can also be programmed in standard eprom programmers. the standard device offers access times of 90, 100, 120, and 150 ns, allowing high speed microprocessors to operate without wait states. to eliminate bus conten- tion, the device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. the device requires only a single 1.8 volt power supply for both read and write functions. internally generated and regulated voltages are provided for the program and erase operations. the device is entirely command set compatible with the jedec single-power-supply flash standard . com- mands are written to the command register using standard microprocessor write timings. register con- tents serve as input to an internal state-machine that controls the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithm?an internal algorithm that auto- matically times the program pulse widths and verifies proper cell margin. the unlock bypass mode facili- tates faster programming times by requiring only two write cycles to program data instead of four. device erasure occurs by executing the erase command sequence. this initiates the embedded erase algorithm?an internal algorithm that automati- cally preprograms the array (if it is not already programmed) before executing the erase operation. during erase, the device automatically times the erase pulse widths and verifies proper cell margin. the host system can detect whether a program or erase operation is complete by observing the ry/by# pin, or by reading the dq7 (data# polling) and dq6 (toggle) status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write opera- tions during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. this can be achi eved in-system or via pro- gramming equipment. the erase suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the reset # pin may be tied to the system reset circuitry. a system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the flash memory. the device offers two power-saving features. when addresses have been stable for a specified amount of time, the device enters the automatic sleep mode . the system can also place the device into the standby mode . power consumption is greatly reduced in both these modes. amd?s flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effective- ness. the device electrically erases all bits within a sector simultaneously via fowler-nordheim tunneling. the data is programmed using hot electron injection.
data sheet february 23, 2009 27546a7 am29sl800d 3 table of contents product selector guide . . . . . . . . . . . . . . . . . . . . . 4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 connection diagrams . . . . . . . . . . . . . . . . . . . . . . . 5 special handling instructions for fbga packages .................. 5 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 6 logic symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . 7 standard products .................................................................... 7 device bus operations . . . . . . . . . . . . . . . . . . . . . 8 table 1. am29sl800d device bus operations ................................8 word/byte configuration .......................................................... 8 requirements for reading array data ..................................... 8 writing commands/command sequences .............................. 8 program and erase operation status ...................................... 9 standby mode .......................................................................... 9 automatic sleep mode ............................................................. 9 reset#: hardware reset pin ................................................. 9 output disable mode .............................................................. 10 table 2. am29sl800dt top boot block sector address table .....10 table 3. am29sl800db bottom boot block sector address table 11 autoselect mode ..................................................................... 12 table 4. am29sl800d autoselect code (high voltage method) ...12 sector protection/unprotection ............................................... 12 temporary sector unprotect .................................................. 12 figure 1. in-system sector protect/unprotect algorithms .............. 13 figure 2. temporary sector unprotect operation........................... 14 hardware data protection ...................................................... 14 command definitions . . . . . . . . . . . . . . . . . . . . . 14 reading array data ................................................................ 14 reset command ..................................................................... 14 autoselect command sequence ............................................ 15 word/byte program command sequence ............................. 15 figure 3. program operation .......................................................... 16 chip erase command sequence ........................................... 16 sector erase command sequence ........................................ 16 erase suspend/erase resume commands ........................... 17 figure 4. erase operation............................................................... 18 table 5. am29sl800d command definitions ................................19 write operation status . . . . . . . . . . . . . . . . . . . . . 20 dq7: data# polling ................................................................. 20 figure 5. data# polling algorithm ................................................... 20 ry/by#: ready/busy# ........................................................... 21 dq6: toggle bit i .................................................................... 21 dq2: toggle bit ii ................................................................... 21 reading toggle bits dq6/dq2 .............................................. 21 figure 6. toggle bit algorithm......................................................... 22 dq5: exceeded timing limits ................................................ 22 dq3: sector erase timer ....................................................... 22 table 6. write operation status ..................................................... 23 absolute maximum ratings . . . . . . . . . . . . . . . . 24 figure 7. maximum negative overshoot waveform ...................... 24 figure 8. maximum positive overshoot waveform........................ 24 operating ranges . . . . . . . . . . . . . . . . . . . . . . . . . 24 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . 25 table 7. cmos compatible ........................................................... 25 zero power flash ................................................................... 26 figure 9. i cc1 current vs. time (showing active and automatic sleep currents) .............................................................................. 26 figure 10. typical i cc1 vs. frequency ........................................... 26 test conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 11. test setup..................................................................... 27 table 8. test specifications ........................................................... 27 table 9. key to switching waveforms ........................................... 27 figure 12. input waveforms and measurement levels ................. 27 ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . 28 table 10. read operations ............................................................ 28 figure 13. read operations timings ............................................. 28 table 11. hardware reset (reset#) ............................................ 29 figure 14. reset# timings .......................................................... 29 table 12. word/byte configuration (byte#) ................................. 30 figure 15. byte# timings for read operations............................ 30 figure 16. byte# timings for write operations............................ 30 table 13. erase/program operations ............................................ 31 figure 17. program operation timings.......................................... 32 figure 18. chip/sector erase operation timings .......................... 33 figure 19. data# polling timings (during embedded algorithms). 34 figure 20. toggle bit timings (during embedded algorithms)...... 34 figure 21. dq2 vs. dq6................................................................. 35 table 14. temporary sector unprotect .......................................... 35 figure 22. temporary sector unprotect timing diagram .............. 35 figure 23. sector protect/unprotect timing diagram .................... 36 table 15. alternate ce# controlled erase/program operations .... 37 figure 24. alternate ce# controlled write operation timings ...... 38 erase and programming performance . . . . . . . 39 table 16. erase and programming performance ........................... 39 table 17. latchup characteristics .................................................. 39 table 18. tsop pin capacitance .................................................. 39 table 19. data retention ............................................................... 39 physical dimensions . . . . . . . . . . . . . . . . . . . . . . 40 ts 048?48-pin standard tsop ............................................ 40 fba048?48-ball fine-pitch ball grid array (fbga) 8.15 x 6.15 mm package ....................................................... 41 fbc048?48-ball fine-pitch ball grid array (fbga) 9 x 8 mm package .................................................................. 42 vbk048?48 ball fine-pitch ball grid array (fbga) ............. 43 8.15 x 6.15 mm ....................................................................... 43 revision summary . . . . . . . . . . . . . . . . . . . . . . . . 44
data sheet 4 am29sl800d 27546a7 february 23, 2009 product selector guide notes: 1. see ?ac characteristics? for full specifications. 2. v cc min. = 1.7 v block diagram family part number am29sl800d speed options 90 (note 2 ) 100 120 150 max access time, ns (t acc )90 ( note 2 ) 100 120 150 max ce# access time, ns (t ce )90 ( note 2 ) 100 120 150 max oe# access time, ns (t oe ) 30355065 input/output buffers x-decoder y-decoder chip enable output enable logic erase voltage generator pgm voltage generator timer v cc detector state control command register v cc v ss we# byte# ce# oe# stb stb dq0 ? dq15 (a-1) sector switches ry/by# reset# data latch y-gating cell matrix address latch a0?a18
data sheet february 23, 2009 27546a7 am29sl800d 5 connection diagrams special handling instructions for fbga packages special handling is required for flash memory products in molded packages (tsop and bga). the package and/or data integrity may be compromised if the package body is exposed to temperatures about 150 c for prolonged periods of time. a1 a15 a18 a14 a13 a12 a11 a10 a9 a8 nc nc we# reset# nc nc ry/by# a17 a7 a6 a5 a4 a3 a2 1 16 2 3 4 5 6 7 8 17 18 19 20 21 22 23 24 9 10 11 12 13 14 15 a16 dq2 byte# v ss dq15/a-1 dq7 dq14 dq6 dq13 dq9 dq1 dq8 dq0 oe# v ss ce# a0 dq5 dq12 dq4 v cc dq11 dq3 dq10 48 33 47 46 45 44 43 42 41 40 39 38 37 36 35 34 25 32 31 30 29 28 27 26 standard tsop a1 b1 c1 d1 e1 f1 g1 h1 a2 b2 c2 d2 e2 f2 g2 h2 a3 b3 c3 d3 e3 f3 g3 h3 a4 b4 c4 d4 e4 f4 g4 h4 a5 b5 c5 d5 e5 f5 g5 h5 a6 b6 c6 d6 e6 f6 g6 h6 dq15/a-1 v ss byte# a16 a15 a14 a12 a13 dq13 dq6 dq14 dq7 a11 a10 a8 a9 v cc dq4 dq12 dq5 nc nc reset# we# dq11 dq3 dq10 dq2 nc a18 nc ry/by# dq9 dq1 dq8 dq0 a5 a6 a17 a7 oe# v ss ce# a0 a1 a2 a4 a3 48-ball fbga (top view, balls facing down)
data sheet 6 am29sl800d 27546a7 february 23, 2009 pin configuration a0?a18 = 19 addresses dq0?dq14 = 15 data inputs/outputs dq15/a-1 = dq15 (data input/output, word mode), a-1 (lsb address input, byte mode) byte# = selects 8-bit or 16-bit mode ce# = chip enable oe# = output enable we# = write enable reset# = hardware reset pin, active low ry/by# = ready/busy# output v cc = 1.65?2.2 v single power supply v ss = device ground nc = pin not connected internally logic symbol 19 16 or 8 dq0?dq15 (a-1) a0?a18 ce# oe# we# reset# byte# ry/by#
data sheet february 23, 2009 27546a7 am29sl800d 7 ordering information standard products amd standard products are available in several packages and operating ranges. the order number (valid combi- nation) is formed by a combination of the elements below. valid combinations valid combinations list configurat ions planned to be supported in vol- ume for this device. consult the local amd sales office to confirm availability of specif ic valid combinations and to check on newly re- leased combinations. am29sl800d t -100 e c temperature range c = commercial (0c to +70c) d = commercial (0c to +70c) with pb-free package i = industrial (?40 c to +85 c) f = industrial (?40 c to +85 c) with pb-free package package type e = 48-pin thin small outline package (tsop) standard pinout (ts 048) vu = 48-ball fine-pitch ball grid array (fbga) 0.80mm pitch, 8.15 x 6.15 mm package (vbk048) wa = 48-ball fine-pitch ball grid array (fbga) 0.80 mm pitch, 8.15 x 6.15 mm package (fba048) wc = 48-ball fine-pitch ball grid array (fbga) 0.80 mm pitch, 9 x 8 mm package (fbc048) speed option see product selector guide and valid combinations boot code sector architecture t = top sector b = bottom sector device number/description am29sl800d 8 megabit (1 m x 8-bit/512 k x 16-bit) cmos flash memory 1.8 volt-only read, program, and erase valid combinations for tsop packages am29sl800dt90, am29sl800db90 ec, ei, ed, ef am29sl800dt100, am29sl800db100 am29sl800dt120, am29sl800db120 am29sl800dt150, am29sl800db150 valid combinations for fbga packages order number package marking am29sl800dt90, am29sl800db90 wac, wad wai, waf a800dt90u, a800db90u c, i, d, f wcc, wcd, wci, wcf a800dt90p, a800db90p am29sl800dt100, am29sl800db100 wac, wad wai, waf a800dt10u, a800db10u wcc, wcd, wci, wcf a800dt10p, a800db10p am29sl800dt120, am29sl800db120 wac, wad wai, waf a800dt12u, a800db12u wcc, wcd, wci, wcf a800dt12p, a800db12p am29sl800dt150, am29sl800db150 wac, wad wai, waf a800dt15u, a800db15u wcc, wcd, wci, wcf a800dt15p, a800db15p am29sl800dt120 vuf a800dt12v a800db12v
data sheet 8 am29sl800d 27546a7 february 23, 2009 device bus operations this section describes the requirements and use of the device bus operations, which are initiated through the internal command register. the command register itself does not occupy an y addressable memory loca- tion. the register is composed of latches that store the commands, along with the address and data informa- tion needed to execute the command. the contents of the register serve as inputs to the internal state machine. the state machine outputs dictate the func- tion of the device. ta bl e 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. the following subsections describe each of these operations in further detail. legend: l = logic low = v il , h = logic high = v ih , v id = 10 1.0 v, x = don?t care, a in = address in, d in = data in, d out = data out notes: 1. addresses are a18:a0 in word mode (byte# = v ih ), a18:a-1 in byte mode (byte# = v il ). 2. the sector protect and sector unprotect functions may also be implemented via programming equipment. word/byte configuration the byte# pin controls whether the device data i/o pins dq15?dq0 operate in the byte or word configura- tion. if the byte# pin is set at logic ?1?, the device is in word configuration, dq15?dq0 are active and con- trolled by ce# and oe#. if the byte# pin is set at logi c ?0?, the device is in byte configuration, and only data i/o pins dq0?dq7 are active and controlled by ce# and oe#. the data i/o pins dq8?dq14 are tri-stated, and the dq15 pin is used as an input for the lsb (a-1) address function. requirements for reading array data to read array data from the outputs, the system must drive the ce# and oe# pins to v il . ce# is the power control and selects the device. oe# is the output control and gates array data to the output pins. we# should remain at v ih . the byte# pin determines whether the device outputs array data in words or bytes. the internal state machine is set for reading array data upon device power-up, or after a hardware reset. this ensures that no spurious alteration of the memory content occurs during the power transition. no command is necessary in this mode to obtain array data. standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. the device remains enabled for read access until the command register contents are altered. see reading array data? on page 14 for more informa- tion. refer to the ac read operations table for timing specifications and to figure 13, on page 28 for the timing diagram. i cc1 in the dc characteristics table represents the active current specification for reading array data. writing commands/command sequences to write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive we# and ce# to v il , and oe# to v ih . for program operations, the byte# pin determines whether the device accepts program data in bytes or table 1. am29sl800d device bus operations operation ce# oe# we# reset# addresses (note 1) dq0? dq7 dq8?dq15 byte# = v ih byte# = v il read l l h h a in d out d out dq8?dq14 = high-z, dq15 = a-1 write l h l h a in d in d in standby v cc 0.2 v xx v cc 0.2 v x high-z high-z high-z output disable l h h h x high-z high-z high-z reset x x x l x high-z high-z high-z sector protect (note) l h l v id sector address, a6 = l, a1 = h, a0 = l d in xx sector unprotect (note) l h l v id sector address, a6 = h, a1 = h, a0 = l d in xx temporary sector unprotect x x x v id a in d in d in high-z
data sheet february 23, 2009 27546a7 am29sl800d 9 words. refer to word/byte configuration? on page 8 for more information. the device features an unlock bypass mode to facili- tate faster programming. once the device enters the unlock bypass mode, only two write cycles are required to program a word or byte, instead of four. the word/byte program command sequence? on page 15 has details on programming data to the device using both standard and unlock bypass command sequences. an erase operation can erase one sector, multiple sec- tors, or the entire device. tables 2 and 3 indicate the address space that each sector occupies. a ?sector address? consists of the address bits required to uniquely select a sector. the command definitions? on page 14 has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. after the system writes the autoselect command sequence, the device enters the autoselect mode. the system can then read autoselect codes from the internal register (which is separate from the memory array) on dq7?dq0. standard read cycle timings apply in this mode. refer to the autoselect mode? on page 12 and autoselect command sequence? on page 15 sec- tions for more information. i cc2 in the dc characteristics table represents the active current specification for the write mode. ac characteristics? on page 28 contains timing specifica- tion tables and timing diagrams for write operations. program and erase operation status during an erase or program operation, the system may check the status of the operation by reading the status bits on dq7?dq0. standard read cycle timings and i cc read specifications apply. refer to write operation status? on page 20 for more information, and to ?ac characteristics? for timing diagrams. standby mode when the system is not reading or writing to the device, it can place the device in the standby mode. in this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, inde- pendent of the oe# input. the device enters the cmos standby mode when the ce# and reset# pins are both held at v cc 0.2 v. (note that this is a more restricted voltage range than v ih .) if ce# and reset# are held at v ih , but not within v cc 0.2 v, the device will be in the standby mode, but the standby current will be gr eater. the device requires standard access time (t ce ) for read access when the device is in either of these standby modes, before it is ready to read data. the device also enters the standby mode when the reset# pin is driven low. refer to the next section, reset#: hardware reset pin. if the device is deselected during erasure or program- ming, the device draws active current until the operation is completed. i cc3 in table 7 on page 25 represents the standby current spec ification. automatic sleep mode the automatic sleep mode minimizes flash device energy consumption. the device automatically enables this mode when addresses remain stable for t acc + 50 ns. the automatic sleep mode is independent of the ce#, we#, and oe# control signals. standard address access timings provide new data when addresses are changed. while in sleep mode, output data is latched and always available to the system. i cc4 in ta b l e 7 o n page 25 represents the automatic sleep mode current specification. reset#: hardware reset pin the reset# pin provides a hardware meth od of reset- ting the device to reading array data. when the reset# pin is driven low for at least a period of t rp , the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the reset# pulse. the device also resets the internal state machine to reading array data. the operation that was interrupted should be rein itiated once the device is ready to accept another command sequence, to ensure data integrity. current is reduced for the duration of the reset# pulse. when reset# is held at v ss 0.2 v, the device draws cmos standby current (i cc4 ). if reset# is held at v il but not within v ss 0.2 v, the standby current is greater. the reset# pin may be tied to the system reset cir- cuitry. a system reset would thus also reset the flash memory, enabling the system to read the boot-up firm- ware from the flash memory. if reset# is asserted during a program or erase oper- ation, the ry/by# pin remains a ?0? (busy) until the internal reset operation is complete, which requires a time of t ready (during embedded algorithms). the system can thus monitor ry/by# to determine whether the reset operation is comp lete. if reset# is asserted when a program or erase operation is not executing (ry/by# pin is ?1?), the reset operation is completed within a time of t ready (not during embedded algo- rithms). the system can read data t rh after the reset# pin returns to v ih .
data sheet 10 am29sl800d 27546a7 february 23, 2009 refer to the table 10 on page 28 for reset# parame- ters and to figure 14, on page 29 for the timing diagram. output disable mode when the oe# input is at v ih , output from the device is disabled. the output pins are placed in the high imped- ance state. table 2. am29sl800dt top boot block sector address table sector a18 a17 a16 a15 a14 a13 a12 sector size (kbytes/ kwords) address range (in hexadecimal) (x8) address range (x16) address range sa00000xxx 64/32 00000h?0ffffh 00000h?07fffh sa10001xxx 64/32 10000h?1ffffh 08000h?0ffffh sa20010xxx 64/32 20000h?2ffffh 10000h?17fffh sa30011xxx 64/32 30000h?3ffffh 18000h?1ffffh sa40100xxx 64/32 40000h?4ffffh 20000h?27fffh sa50101xxx 64/32 50000h?5ffffh 28000h?2ffffh sa60110xxx 64/32 60000h?6ffffh 30000h?37fffh sa70111xxx 64/32 70000h?7ffffh 38000h?3ffffh sa81000xxx 64/32 80000h?8ffffh 40000h?47fffh sa91001xxx 64/32 90000h?9ffffh 48000h?4ffffh sa101010xxx 64/32 a 0000h?affffh 50000h?57fffh sa111011xxx 64/32 b 0000h?bffffh 58000h?5ffffh sa121100xxx 64/32 c 0000h?cffffh 60000h?67fffh sa131101xxx 64/32 d 0000h?dffffh 68000h?6ffffh sa141110xxx 64/32 e 0000h?effffh 70000h?77fffh sa1511110xx 32/16 f 0000h?f7fffh 78000h?7bfffh sa161111100 8/4 f 8000h?f9fffh 7c000h?7cfffh sa171111101 8/4 fa000h?fbfffh7d 000h?7dfffh sa18111111x 16/8 fc 000h?fffffh 7e000h?7ffffh
data sheet february 23, 2009 27546a7 am29sl800d 11 note for tables 2 and 3: address range is a18:a-1 in byte mode and a18:a0 in word mode. see ?word/byte configuration? section for more information. table 3. am29sl800db bottom boot block sector address table sector a18 a17 a16 a15 a14 a13 a12 sector size (kbytes/ kwords) address range (in hexadecimal) (x8) address range (x16) address range sa0000000x 16/8 0 0000h?03fffh 00000h?01fffh sa10000010 8/4 0 4000h?05fffh 02000h?02fffh sa20000011 8/4 0 6000h?07fffh 03000h?03fffh sa300001xx 32/16 08000h?0ffffh 04000h?07fffh sa40001xxx 64/32 10000h?1ffffh 08000h?0ffffh sa50010xxx 64/32 20000h?2ffffh 10000h?17fffh sa60011xxx 64/32 30000h?3ffffh 18000h?1ffffh sa70100xxx 64/32 40000h?4ffffh 20000h?27fffh sa80101xxx 64/32 50000h?5ffffh 28000h?2ffffh sa90110xxx 64/32 60000h?6ffffh 30000h?37fffh sa100111xxx 64/32 70000h?7ffffh 38000h?3ffffh sa111000xxx 64/32 80000h?8ffffh 40000h?47fffh sa121001xxx 64/32 90000h?9ffffh 48000h?4ffffh sa131010xxx 64/32 a 0000h?affffh 50000h?57fffh sa141011xxx 64/32 b 0000h?bffffh 58000h?5ffffh sa151100xxx 64/32 c 0000h?cffffh 60000h?67fffh sa161101xxx 64/32 d 0000h?dffffh 68000h?6ffffh sa171110xxx 64/32 e 0000h?effffh 70000h?77fffh sa181111xxx 64/32 f 0000h?fffffh 78000h?7ffffh
data sheet 12 am29sl800d 27546a7 february 23, 2009 autoselect mode the autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on dq7?dq0. this mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. however, the autoselect codes can also be accessed in-system through the command register. when using programming equipment, the autoselect mode requires vid on address pin a9. address pins a6, a1, and a0 must be as shown in table 4. in addi- tion, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see table 2 on page 10 and ta bl e 3 o n page 11 ). ta b l e 4 shows the remaining address bits that are don?t care. when all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on dq7?dq0. to access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in table 5 on page 19 . this method does not require vid. see command definitions? on page 14 for details on using the autose- lect mode. l = logic low = v il , h = logic high = v ih , sa = sector address, x = don?t care. sector protection/unprotection the hardware sector protection feature disables both program and erase operations in any sector. the hard- ware sector unprotection feature re-enables both program and erase operations in previously protected sectors. sector protection/unprotection can be imple- mented via two methods. sector protection/ unprotection requires v id on the reset# pin only, and can be implemented either in- system or via programming equipment. figure 1, on page 13 shows the algorithms and figure 23, on page 36 shows the timing diagram. for sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. the device is shipped with all sectors unprotected. amd offers the option of programming and protecting sectors at its factory prior to shipping the device through amd?s expressflash? service. contact an amd representative for details. it is possible to determine whether a sector is protected or unprotected. see autoselect mode? on page 12 for details. temporary sector unprotect this feature allows temporary unprotection of previ- ously protected sectors to change data in-system. the sector unprotect mode is activated by setting the reset# pin to v id . during this mode, formerly pro- tected sectors can be programmed or erased by selecting the sector addresses. once v id is removed from the reset# pin, all the previously protected sectors are protected again. figure 2, on page 14 shows the algorithm, and figure 22, on page 35 shows the timing diagrams, for this feature. table 4. am29sl800d autoselect code (high voltage method) description mode ce# oe# we# a18 to a12 a11 to a10 a9 a8 to a7 a6 a5 to a2 a1 a0 dq8 to dq15 dq7 to dq0 manufacturer id : amd l l h x x v id x l x l l x 01h device id: am29sl800d (top boot block) word l l h xxv id xlxlh 22h eah byte l l h x eah device id: am29sl800d (bottom boot block) word l l h xxv id xlxlh 22h 6bh byte l l h x 6bh sector protection verification l l h sa x v id xlxhl x 01h (protected) x 00h (unprotected)
data sheet february 23, 2009 27546a7 am29sl800d 13 figure 1. in-system sector protect/unprotect algorithms sector protect: write 60h to sector address with a6 = 0, a1 = 1, a0 = 0 set up sector address wait 150 s verify sector protect: write 40h to sector address with a6 = 0, a1 = 1, a0 = 0 read from sector address with a6 = 0, a1 = 1, a0 = 0 start plscnt = 1 reset# = v id wait 1 ms first write cycle = 60h? data = 01h? remove v id from reset# write reset command sector protect complete yes yes no plscnt = 25? yes device failed increment plscnt temporary sector unprotect mode no sector unprotect: write 60h to sector address with a6 = 1, a1 = 1, a0 = 0 set up first sector address wait 15 ms verify sector unprotect: write 40h to sector address with a6 = 1, a1 = 1, a0 = 0 read from sector address with a6 = 1, a1 = 1, a0 = 0 start plscnt = 1 reset# = v id wait 1 ms data = 00h? last sector verified? remove v id from reset# write reset command sector unprotect complete yes no plscnt = 1000? yes device failed increment plscnt temporary sector unprotect mode no all sectors protected? yes protect all sectors: the indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address set up next sector address no yes no yes no no yes no sector protect algorithm sector unprotect algorithm first write cycle = 60h? protect another sector? reset plscnt = 1
data sheet 14 am29sl800d 27546a7 february 23, 2009 figure 2. temporary sector unprotect operation hardware data protection the command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to table 5 on page 19 for command definitions). in addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during v cc power-up and power-down transitions, or from system noise. low v cc write inhibit when v cc is less than v lko , the device does not accept any write cycles. this protects data during v cc power-up and power-down. the command register and all internal program/erase circuits are disabled, and the device resets. subsequent writes are ignored until v cc is greater than v lko . the system must provide the proper signals to the control pins to prevent uninten- tional writes when v cc is greater than v lko . write pulse ?glitch? protection noise pulses of less than 5 ns (typical) on oe#, ce# or we# do not initiate a write cycle. logical inhibit write cycles are inhibited by holding any one of oe# = v il , ce# = v ih or we# = v ih . to initiate a write cycle, ce# and we# must be a logical zero while oe# is a logical one. power-up write inhibit if we# = ce# = v il and oe# = v ih during power up, the device does not accept commands on the rising edge of we#. the internal state machine is automatically reset to reading array data on power-up. command definitions writing specific address and data commands or sequences into the command register initiates device operations. table 5 on page 19 defines the valid reg- ister command sequences. writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. a reset command is then required to return the device to reading array data. all addresses are latched on the falling edge of we# or ce#, whichever happens later. all data is latched on the rising edge of we# or ce#, whichever happens first. refer to the appropriate timing diagrams in the ac characteristics? on page 28 section. reading array data the device is automatically set to reading array data after device power-up. no commands are required to retrieve data. the device is also ready to read array data after completing an embedded program or embedded erase algorithm. after the device accepts an erase suspend command, the device enters the erase suspend mode. the system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. after completing a programming operation in the erase suspend mode, the system may once again read array data with the same exception. see erase suspend/erase resume commands? on page 17 for more information on this mode. the system must issue the reset command to re- enable the device for reading array data if dq5 goes high, or while in the autoselect mode. see reset com- mand? on page 14 . see also requirements for reading array data? on page 8 for more information. table 10 on page 28 pro- vides the read parameters, and figure 12, on page 27 shows the timing diagram. reset command writing the reset command to the device resets the device to reading array data. address bits are don?t care for this command. start perform erase or program operations reset# = v ih temporary sector unprotect completed (note 2) reset# = v id (note 1) notes: 1. all protected sectors unprotected. 2. all previously pr otected sectors are protected once again.
data sheet february 23, 2009 27546a7 am29sl800d 15 the reset command may be written between the sequence cycles in an erase command sequence before erasing begins. this resets the device to reading array data. once erasure begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in a program command sequence before programming begins. this resets the device to reading array data (also applies to programming in erase suspend mode). once programming begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in an autoselect command sequence. once in the autoselect mode, the reset command must be written to return to read ing array data (also applies to autoselect during erase suspend). if dq5 goes high during a program or erase operation, writing the reset comman d returns the device to reading array data (also applies during erase suspend). autoselect command sequence the autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. table 5 on page 19 shows the address and data requirements. this method is an alternative to that shown in table 4 on page 12 , which is intended for prom programmers and requires v id on address bit a9. the autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. the device then enters the autoselect mode, and the system may read at any address any number of times, without initiating another command sequence. a read cycle at address xx00h retrieves the manufacturer code. a read cycle at address 01h in word mode (or 02h in byte mode) returns the device code. a read cycle containing a sector address (sa) and the address 02h in word mode (or 04h in byte mode) returns 01h if that sector is protected, or 00h if it is unprotected. refer to table 2 on page 10 and ta bl e 3 on page 11 for valid sector addresses. the system must write the reset command to exit the autoselect mode and return to reading array data. word/byte program command sequence the system may program the device by word or byte, depending on the state of the byte# pin. program- ming is a four-bus-cycle operation. the program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. the program address and data are written next, which in turn initiate the embedded program algorithm. the system is not required to provide further controls or tim- ings. the device automatically generates the program pulses and verifies the programmed cell margin. table 5 on page 19 shows the address and data requirements for the byte program command sequence. when the embedded program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. the system can determine the status of the program operation by using dq7, dq6, or ry/by#. see table on page 20 for infor- mation on these status bits. any commands written to the device during the embedded program algorithm are ignored. note that a hardware reset immediately terminates the program- ming operation. the byte program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. programming is allowed in any sequence and across sector boundaries. a bit cannot be programmed from a ?0? back to a ?1?. attempting to do so may halt the operation and set dq5 to ?1?, or cause the data# polling algorithm to indicate the operation was suc- cessful. however, a succeeding read will show that the data is still ?0?. only erase operations can convert a ?0? to a ?1?. unlock bypass command sequence the unlock bypass feature allows the system to program bytes or words to the device faster than using the standard program command sequence. the unlock bypass command sequence is in itiated by first writing two unlock cycles. this is followed by a third write cycle containing the unlock bypass command, 20h. the device then enters the unlock bypass mode. a two- cycle unlock bypass program command sequence is all that is required to program in this mode. the first cycle in this sequence contains the unlock bypass program command, a0h; the second cycle contains the program address and data. additional data is programmed in the same manner. this mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total program- ming time. table 5 on page 19 shows the requirements for the command sequence. during the unlock bypass mode, only the unlock bypass program and unlock bypass reset commands are valid. to exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. the first cycle must contain the data 90h; the second cycle the data 00h. addresses are don?t cares. the device then returns to reading array data.
data sheet 16 am29sl800d 27546a7 february 23, 2009 figure 3 illustrates the algorithm for the program oper- ation. see table 13 on page 31 for parameters, and to figure 17, on page 32 for timing diagrams. 1. see table 5 for program command sequence. figure 3. program operation chip erase command sequence chip erase is a six bus cycle operation. the chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the embedded erase algorithm. the device does not require the system to preprogram prior to erase. the embedded erase algo- rithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. the system is not required to provide any con- trols or timings during these operations. ta bl e 5 o n page 19 shows the address and data requirements for the chip erase command sequence. any commands written to the chip during the embedded erase algorithm are ignored. note that a hardware reset during the chip erase operation imme- diately terminates the operation. the chip erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. the system can determine the status of the erase oper- ation by using dq7, dq6, dq2, or ry/by#. see ?write operation status? for information on these status bits. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. figure 4, on page 18 illustrates the algorithm for the erase operation. see table 13 on page 28 for parame- ters, and to figure 10, on page 26 for timing diagrams. sector erase command sequence sector erase is a six bus cycle operation. the sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. table 5 shows the address and data requirements for the sector erase command sequence. the device does not require the system to preprogram the memory prior to erase. the embedded erase algo- rithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. the system is not required to provide any controls or timings during these operations. after the command sequence is written, a sector erase time-out of 50 s begins. during the time-out period, additional sector addresses and sector erase com- mands may be written. loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. the time between these additional cycles must be less than 50 s, otherwise the last address and command might not be accepted, and erasure may begin. it is recom- mended that processor interrupts be disabled during start write program command sequence data poll from system verify data? no yes last address? no yes programming completed increment address embedded program algorithm in progress
data sheet february 23, 2009 27546a7 am29sl800d 17 this time to ensure all commands are accepted. the interrupts can be re-enabled after the last sector erase command is written. if the time between additional sector erase commands can be assumed to be less than 50 s, the system need not monitor dq3. any command other than sector erase or erase suspend during the time-out period resets the device to reading array data. the system must rewrite the command sequence and any additional sector addresses and commands. the system can monitor dq3 to determine if the sector erase timer has timed out. (see dq3: sector erase timer? on page 22 .) the time-out begins from the rising edge of the final we# pulse in the command sequence. once the sector erase operation has begun, only the erase suspend command is valid. all other commands are ignored. note that a hardware reset during the sector erase operation immediately terminates the operation. the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. the system can determine the status of the erase operation by using dq7, dq6, dq2, or ry/by#. (refer to write operation status? on page 20 for information on these status bits.) figure 4, on page 18 illustrates the algorithm for the erase operation. refer to the table 16 on page 39 for parameters, and to figure 18, on page 33 for timing diagrams. erase suspend/erase resume commands the erase suspend comma nd allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. this command is valid only during the sector erase operation, including the 50 s time-out period during the sector erase command sequence. the erase suspend command is ignored if written during the chip erase operation or embedded program algo- rithm. writing the erase suspend command during the sector erase time-out immediately terminates the time-out period and suspends the erase operation. addresses are ?don?t-cares? when writing the erase suspend command. when the erase suspend command is written during a sector erase operation, the device requires a maximum of 20 s to suspend the erase operation. however, when the erase suspend command is written during the sector erase time-out, the device immediately ter- minates the time-out period and suspends the erase operation. after the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (the device ?erase suspends? all sectors selected for erasure.) normal read and write timings and command definitions apply. reading at any address within erase-suspended sectors produces status data on dq7?dq0. the system can use dq7, or dq6 and dq2 together, to determine if a sector is actively erasing or is erase-sus- pended. see write operation status? on page 20 for information on these status bits. after an erase-suspended program operation is com- plete, the system can once again read array data within non-suspended sectors. the system can determine the status of the program operation using the dq7 or dq6 status bits, just as in the standard program oper- ation. see write operation status? on page 20 for more information. the system may also write the autoselect command sequence when the device is in the erase suspend mode. the device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. when the device exits the autoselect mode, the device reverts to the erase suspend mode, and is ready for another valid operation. see autoselect command sequence? on page 15 for more information. the system must write the erase resume command (address bits are don?t care ) to exit the erase suspend mode and continue the sector erase operation. further writes of the resume command are ignored. another erase suspend command can be written after the device has resumed erasing.
data sheet 18 am29sl800d 27546a7 february 23, 2009 notes: 1. see table 5 for erase command sequence. 2. see ?dq3: sector erase timer? for more information. figure 4. erase operation start write erase command sequence data poll from system data = ffh? no yes erasure completed embedded erase algorithm in progress
data sheet february 23, 2009 27546a7 am29sl800d 19 legend: x = don?t care ra = address of the memory location to be read. rd = data read from location ra during read operation. pa = address of the memory location to be programmed. addresses latch on the falling edge of the we# or ce# pulse, whichever happens later. pd = data to be programmed at location pa. data latches on the rising edge of we# or ce# pulse, whichever happens first. sa = address of the sector to be verified (in autoselect mode) or erased. address bits a18?a12 uniquely select any sector. notes: 1. see table 1 for description of bus operations. 2. all values are in hexadecimal. 3. except when reading array or aut oselect data, all bus cycles are write operations. 4. data bits dq15?dq8 are don?t cares for unlock and command cycles. 5. address bits a18?a11 are don?t cares for unlock and command cycles, unless sa or pa required. 6. no unlock or command cycles required when reading array data, unless sa or pa required. 7. the reset command is required to return to reading array data when device is in the autoselect mode, or if dq5 goes high (while the device is providing status data). 8. the fourth cycle of the autoselect command sequence is a read cycle. 9. the data is 00h for an unprotected sector and 01h for a protected sector. see ?autoselect command sequence? for more information. 10. the unlock bypass command is required prior to the unlock bypass program command. 11. the unlock bypass reset command is required to return to reading array data when the device is in the unlock bypass mode. 12. the system may read and program in non-erasing sectors, or enter the autoselect mode, when in the erase suspend mode. the erase suspend command is valid only during a sector erase operation. 13. the erase resume command is valid only during the erase suspend mode. table 5. am29sl800d command definitions command sequence (note 1) cycles bus cycles (notes 2-5) first second third fourth fifth sixth addr data addr data addr data addr data addr data addr data read (note 6) 1 ra rd reset (note 7) 1 xxx f0 autoselect (note 8) manufacturer id word 4 555 aa 2aa 55 555 90 x00 01 byte aaa 555 aaa device id, top boot block word 4 555 aa 2aa 55 555 90 x01 22ea byte aaa 555 aaa x02 ea device id, bottom boot block word 4 555 aa 2aa 55 555 90 x01 226b byte aaa 555 aaa x02 6b sector protect verify (note 9) word 4 555 aa 2aa 55 555 90 (sa) x02 xx00 xx01 byte aaa 555 aaa (sa) x04 00 01 extension word 4 555 aa 2aa 55 555 90 x03 tbd tbd byte aaa 555 aaa x04 tbd tbd program word 4 555 aa 2aa 55 555 a0 pa pd byte aaa 555 aaa unlock bypass word 3 555 aa 2aa 55 555 20 byte aaa 555 aaa unlock bypass program (note 10) 2 xxx a0 pa pd unlock bypass reset (note 11) 2 xxx 90 xxx 00 chip erase word 6 555 aa 2aa 55 555 80 555 aa 2aa 55 555 10 byte aaa 555 aaa aaa 555 aaa sector erase word 6 555 aa 2aa 55 555 80 555 aa 2aa 55 sa 30 byte aaa 555 aaa aaa 555 erase suspend (note 12) 1 xxx b0 erase resume (note 13) 1 xxx 30
data sheet 20 am29sl800d 27546a7 february 23, 2009 write operation status the device provides several bits to determine the status of a write operation: dq2, dq3, dq5, dq6, dq7, and ry/by#. table 6 and the following subsec- tions describe the functions of these bits. dq7, ry/by#, and dq6 each offer a method for determining whether a program or erase operation is complete or in progress. these three bits are discussed first. dq7: data# polling the data# polling bit, dq7, indicates to the host system whether an embedded algorithm is in progress or completed, or whether the device is in erase sus- pend. data# polling is valid af ter the rising edge of the final we# pulse in the program or erase command sequence. during the embedded program algorithm, the device outputs on dq7 the complement of the datum pro- grammed to dq7. this dq7 status also applies to programming during erase suspend. when the embedded program algorithm is complete, the device outputs the datum programmed to dq7. the system must provide the program address to read valid status information on dq7. if a pr ogram address falls within a protected sector, data# polling on dq7 is active for approximately 1 s, then the device returns to reading array data. during the embedded erase algorithm, data# polling produces a 0 on dq7. when the embedded erase algorithm is complete, or if the device enters the erase suspend mode, data# polling produces a 1 on dq7. this is analogous to the complement/true datum output described for the embedded program algorithm: the erase function changes all the bits in a sector to 1 ; prior to this, the device outputs the complement , or 0 . the system must provide an address within any of the sectors selected for erasure to read valid status infor- mation on dq7. after an erase command sequence is written, if all sectors selected for erasing are protected, data# polling on dq7 is active for approximately 100 s, then the device returns to reading array data. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. when the system detects dq7 has changed from the complement to true data, it can read valid data at dq7? dq0 on the following read cycles. this is because dq7 may change asynchronously with dq0?dq6 while output enable (oe#) is asserted low. figure 19, on page 34 , data# polling timings (during embedded algorithms), illustrates this. table 6 on page 23 shows the outputs for data# polling on dq7. figure 5 shows the data# polling algorithm. dq7 = data? yes no no dq5 = 1? no yes yes fail pass read dq7?dq0 addr = va read dq7?dq0 addr = va dq7 = data? start notes: 1. va = valid address for progra mming. during a sector erase operation, a valid address is an address within any sector selected for erasure. during chip erase, a valid address is any non-protected sector address. 2. dq7 should be rechecked even if dq5 = ?1? because dq7 may change simultaneously with dq5. figure 5. data# polling algorithm
data sheet february 23, 2009 27546a7 am29sl800d 21 ry/by#: ready/busy# the ry/by# is a dedicated, open-drain output pin that indicates whether an embedded algorithm is in progress or complete. the ry/by# status is valid after the rising edge of the final we# pulse in the command sequence. since ry/by# is an open-drain output, several ry/by# pins can be tied together in parallel with a pull-up resistor to v cc . if the output is low (busy), the device is actively erasing or programming. (this includes programming in the erase suspend mode.) if the output is high (ready), the device is ready to read array data (including during the erase suspend mode), or is in the standby mode. table 6 on page 23 shows the outputs for ry/by#. figure 14, on page 29 , figure 17, on page 32 , and figure 18, on page 33 shows ry/by# for reset, pro- gram, and erase operations, respectively. dq6: toggle bit i toggle bit i on dq6 indicates whether an embedded program or erase algorithm is in progress or complete, or whether the device has entered the erase suspend mode. toggle bit i may be read at any address, and is valid after the rising edge of the final we# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. during an embedded program or erase algorithm operation, successive read cycles to any address cause dq6 to toggle (the system may use either oe# or ce# to control the read cycles). when the operation is complete, dq6 stops toggling. after an erase command sequence is written, if all sectors selected for erasing are protected, dq6 toggles for approximately 100 s, then returns to reading array data. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. the system can use dq6 and dq2 together to deter- mine whether a sector is acti vely erasing or is erase- suspended. when the device is actively erasing (that is, the embedded erase algorithm is in progress), dq6 toggles. when the device enters the erase suspend mode, dq6 stops toggling. however, the system must also use dq2 to determine which sectors are erasing or erase-suspended. alternatively, the system can use dq7 (see the subsection on dq7: data# polling). if a program address falls within a protected sector, dq6 toggles for approximately 1 s after the program command sequence is written, then returns to reading array data. dq6 also toggles during the erase-suspend-program mode, and stops toggling once the embedded program algorithm is complete. table 6 on page 23 shows the outputs for toggle bit i on dq6. figure 6, on page 22 shows the toggle bit algorithm. figure 20, on page 34 shows the toggle bit timing diagrams. figure 21, on page 35 shows the dif- ferences between dq2 and dq6 in graphical form. see also the subsection on dq2: toggle bit ii. dq2: toggle bit ii the toggle bit ii on dq2, when used with dq6, indi- cates whether a particular sector is actively erasing (that is, the embedded erase algorithm is in progress), or whether that sector is erase-suspended. toggle bit ii is valid after the rising edge of the final we# pulse in the command sequence. the device toggles dq2 with each oe# or ce# read cycle. dq2 toggles when the system reads at addresses within those sectors that have been selected for era- sure. but dq2 cannot distinguish whether the sector is actively erasing or is erase-suspended. dq6, by com- parison, indicates whethe r the device is actively erasing, or is in erase suspend, but cannot distinguish which sectors are selected for erasure. thus, both status bits are required for sector and mode informa- tion. refer to table 6 on page 23 to compare outputs for dq2 and dq6. figure 6, on page 22 shows the toggle bit algorithm in flowchart form, and the section dq2: toggle bit ii explains the algorithm. see also the dq6: toggle bit i subsection. figure 20, on page 34 shows the toggle bit timing diagram. figure 21, on page 35 shows the differ- ences between dq2 and dq6 in graphical form. reading toggle bits dq6/dq2 refer to figure 6, on page 22 for the following discus- sion. whenever the system initially begins reading toggle bit status, it must read dq7?dq0 at least twice in a row to determine whether a toggle bit is toggling. typically, the system would note and store the value of the toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has completed the program or erase operation. the system can read array data on dq7?dq0 on the following read cycle. however, if after the initia l two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of dq5 is high (see the section on dq5). if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped tog- gling just as dq5 went high. if the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. if it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data.
data sheet 22 am29sl800d 27546a7 february 23, 2009 the remaining scenario is that the system initially determines that the toggle bit is toggling and dq5 has not gone high. the system may continue to monitor the toggle bit and dq5 through successive read cycles, determining the status as described in the previous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of figure 6 ). notes: 1. read toggle bit twice to determine whether or not it is toggling. see text. 2. recheck toggle bit because it ma y stop toggling as dq5 changes to ?1?. see text figure 6. toggle bit algorithm dq5: exceeded ti ming limits dq5 indicates whether the program or erase time has exceeded a specified intern al pulse count limit. under these conditions dq5 produces a 1 . this is a failure condition that indicates the program or erase cycle was not successfully completed. the dq5 failure condition may appear if the system tries to program a 1 to a location that is previously pro- grammed to 0 . only an erase operation can change a 0 back to a 1 . under this condition, the device halts the operation, and when the operation has exceeded the timing limits, dq5 produces a 1 . under both these conditions, the system must issue the reset command to return the device to reading array data. dq3: sector erase timer after writing a sector erase command sequence, the system may read dq3 to determine whether or not an erase operation has begun. (the sector erase timer does not apply to the chip erase command.) if addi- tional sectors are selected for erasure, the entire time- out also applies after each additional sector erase com- mand. when the time-out is complete, dq3 switches from 0 to 1 . if the time between additional sector erase commands from the system can be assumed to be less than 50 s, the system need not monitor dq3. see also sector erase command sequence? on page 16 . after the sector erase command sequence is written, the system should read the status on dq7 (data# polling) or dq6 (toggle bit i) to ensure the device has accepted the command sequence, and then read dq3. if dq3 is 1 , the internally controlled erase cycle has begun; all further commands (other than erase sus- pend) are ignored until the erase operation is complete. if dq3 is 0 , the device will accept additional sector erase commands. to ensure the command has been accepted, the system software should check the status of dq3 prior to and following each subsequent sector erase command. if dq3 is high on the second status check, the last command might not have been accepted. figure 6 shows the outputs for dq3. start no yes yes dq5 = 1? no yes toggle bit = toggle? no program/erase operation not complete, write reset command program/erase operation complete read dq7?dq0 toggle bit = toggle? read dq7?dq0 twice read dq7?dq0
data sheet february 23, 2009 27546a7 am29sl800d 23 notes: 1. dq5 switches to ?1? when an embedded program or embedded eras e operation has exceeded the maximum timing limits. see ?dq5: exceeded timing limits for more information. 2. dq7 and dq2 require a valid addres s when reading status information. refer to t he appropriate subsection for further details. table 6. write operation status operation dq7 (note 2) dq6 dq5 (note 1) dq3 dq2 (note 2) ry/by# standard mode embedded program algorithm dq7# toggle 0 n/a no toggle 0 embedded erase algorithm 0 toggle 0 1 toggle 0 erase suspend mode reading within erase suspended sector 1 no toggle 0 n/a toggle 1 reading within non-erase suspended sector data data data data data 1 erase-suspend-program dq7# toggle 0 n/a n/a 0
data sheet 24 am29sl800d 27546a7 february 23, 2009 absolute maximum ratings storage temperature plastic packages ...............................?65 c to +150 c ambient temperature with power applied............................?65 c to +125 c voltage with respect to ground v cc (note 1) ................................ ?0.5 v to +2.5 v a9 , oe# , and reset# (note 2)............. ... ?0.5 v to +11.0 v all other pins (note 1)........... ?0.5 v to v cc +0.5 v output short circuit current (note 3) ............. 100 ma notes: 1. minimum dc voltage on input or i/o pins is ?0.5 v. during voltage transitions, input or i/o pins may overshoot v ss to ?2.0 v for periods of up to 20 ns. see figure 7. maximum dc voltage on input or i/o pins is v cc +0.5 v. during voltage transitions, input or i/o pins may overshoot to v cc +2.0 v for periods up to 20 ns. see figure 8. 2. minimum dc input voltage on pins a9, oe#, and reset# is ?0.5 v. during voltage transitions, a9, oe#, and reset# may overshoot v ss to ?2.0 v for periods of up to 20 ns. see maximum dc input voltage on pin a9 is +11.0 v which may overshoot to 12.5 v for periods up to 20 ns. 3. no more than one output may be shorted to ground at a time. duration of the short circuit should not be greater than one second. stresses above those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. exposure of the de vice to absolute maximum rating conditions for extended periods ma y affect device reliability. operating ranges commercial (c) devices ambient temperature (t a ).......................0c to +70c industrial (i) devices ambient temperature (t a )...................?40c to +85c v cc supply voltages v cc , 90ns speed option ...................+1.70 v to +2.2 v v cc , all other speed options ............+1.65 v to +2.2 v operating ranges define those limi ts between which the functionality of the device is guaranteed. 20 ns 20 ns 0.0 v ?0.5 v 20 ns ?2.0 v figure 7. maximum negative overshoot waveform 20 ns 20 ns v cc +2.0 v v cc +0.5 v 20 ns 2.0 v figure 8. maximum positive overshoot waveform
data sheet february 23, 2009 27546a7 am29sl800d 25 dc characteristics notes: 1. the i cc current listed is typically less than 1 ma/mhz, with oe# at v ih . typical v cc is 2.0 v. 2. the maximum i cc specifications are tested with v cc = v cc max. 3. i cc active while embedded erase or embedded program is in progress. 4. automatic sleep mode enables the low power mode when addresses remain stable for t acc + 50 ns. 5. not 100% tested. table 7. cmos compatible parameter description test conditions min typ max unit i li input load current v in = v ss to v cc , v cc = v cc max 1.0 a i lit a9 input load current v cc = v cc max ; a9 = 11.0 v 35 a i lo output leakage current v out = v ss to v cc , v cc = v cc max 1.0 a i cc1 v cc active read current (notes 1, 2) ce# = v il, oe# = v ih, byte mode 5 mhz 5 10 ma 1 mhz 1 3 ce# = v il, oe# = v ih, word mode 5 mhz 5 10 1 mhz 1 3 i cc2 v cc active write current (notes 2, 3, 5) ce# = v il, oe# = v ih 15 30 ma i cc3 v cc standby current (note 2) ce#, reset# = v cc 0.2 v 0.2 5 a i cc4 v cc reset current (note 2) reset# = v ss 0.2 v 0.2 5 a i cc5 automatic sleep mode (notes 2, 3) v ih = v cc 0.2 v; v il = v ss 0.2 v 0.2 5 a v il input low voltage ?0.5 0.3 x v cc v v ih input high voltage 0.7 x v cc v cc + 0.3 v v id voltage for autoselect and temporary sector unprotect v cc = 2.0 v 9.0 11.0 v v ol1 output low voltage i ol = 2.0 ma, v cc = v cc min 0.25 v v ol2 i ol = 100 a, v cc = v cc min 0.1 v v oh1 output high voltage i oh = ?2.0 ma, v cc = v cc min 0.85 x v cc v v oh2 i oh = ?100 a, v cc = v cc min v cc ?0.1 v v lko low v cc lock-out voltage (note 4) 1.2 1.5 v
data sheet 26 am29sl800d 27546a7 february 23, 2009 dc characteristics (continued) zero power flash 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 supply current in ma time in ns note: addresses are switching at 1 mhz figure 9. i cc1 current vs. time (showing ac tive and automatic sleep currents) 10 8 4 0 12345 frequency in mhz supply current in ma note: t = 25 c figure 10. typical i cc1 vs. frequency 1.8 v 2.2 v 2 6
data sheet february 23, 2009 27546a7 am29sl800d 27 test conditions c l device under test figure 11. test setup table 8. test specifications test condition -90, -100 -120, -150 unit output load 1 ttl gate output load capacitance, c l (including jig capacitance) 30 100 pf input rise and fall times 5 ns input pulse levels 0.0?2.0 v input timing measurement reference levels 1.0 v output timing measurement reference levels 1.0 v table 9. key to switching waveforms waveform inputs outputs steady changing from h to l changing from l to h don?t care, any change permitted changing, state unknown does not apply center line is high impedance state (high z) 2.0 v 0.0 v 1.0 v 1.0 v output measurement level input figure 12. input waveform s and measurement levels
data sheet 28 am29sl800d 27546a7 february 23, 2009 ac characteristics notes: 1. not 100% tested. 2. see figure 11, on page 27 and table 8 on page 27 for test specifications 3. v cc min. = 1.7v . table 10. read operations parameter description speed options jedec std test setup -90 -100 -120 -150 unit t avav t rc read cycle time (note 1) min 90 ( note 3 ) 100 120 150 ns t avqv t acc address to output delay ce# = v il oe# = v il max 90 ( note 3 ) 100 120 150 ns t elqv t ce chip enable to output delay oe# = v il max 90 ( note 3 ) 100 120 150 ns t glqv t oe output enable to output delay max 30 35 50 65 ns t ehqz t df chip enable to output high z ( note 1 ) max 16 ns t ghqz t df output enable to output high z ( note 1 ) max 16 ns t oeh output enable hold time (note 1) read min 0 ns toggle and data# polling min 30 ns t axqx t oh output hold time from addresses, ce# or oe#, whichever occurs first ( note 1 ) min 0 ns t ce outputs we# addresses ce# oe# high z output valid high z addresses stable t rc t acc t oeh t oe 0 v ry/by# reset# t d t o figure 13. read operations timings
data sheet february 23, 2009 27546a7 am29sl800d 29 ac characteristics note: not 100% tested. table 11. hardware reset (reset#) parameter description all speed options jedec std unit t ready reset# pin low (during embedded algorithms) to read or write (see note) max 20 s t ready reset# pin low (not during embedded algorithms) to read or write (see note) max 500 ns t rp reset# pulse width min 500 ns t rh reset# high time before read (see note) min 200 ns t rpd reset# low to standby mode min 20 s t rb ry/by# recovery time min 0 ns reset# ry/by# ry/by# t rp t ready reset timings not during embedded algorithms t ready ce#, oe# t rh ce#, oe# reset timings during embedded algorithms reset# t rp t rb figure 14. reset# timings
data sheet 30 am29sl800d 27546a7 february 23, 2009 ac characteristics table 12. word/byte configuration (byte#) parameter description speed options jedec std -90 -100 -120 -150 unit t elfl/ t elfh ce# to byte# switching low or high max 10 ns t flqz byte# switching low to output high z max 50 50 60 60 ns t fhqv byte# switching high to output active min 90 100 120 150 ns dq15 output data output ce# oe# byte# t elfl dq0?dq14 data output (dq0?dq14) dq15/a-1 address input t flqz byte# switching from word to byte mode dq15 output data output byte# t elfh dq0?dq14 data output (dq0?dq14) dq15/a-1 address input t fhqv byte# switching from byte to word mode figure 15. byte# timing s for read operations note: refer to the erase/program operations table for t as and t ah specifications. figure 16. byte# timings for write operations ce# we# byte# the falling edge of the last we# signal t hold (t ah ) t set (t as )
data sheet february 23, 2009 27546a7 am29sl800d 31 ac characteristics notes: 1. not 100% tested. 2. see the table 16 on page 39 for more information. table 13. erase/program operations parameter speed options jedec std description -90 -100 -120 -150 unit t avav t wc write cycle time (note 1) min 90 100 120 150 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 50 60 70 ns t dvwh t ds data setup time min 45 50 60 70 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recovery time before write (oe# high to we# low) min 0 ns t elwl t cs ce# setup time min 0 ns t wheh t ch ce# hold time min 0 ns t wlwh t wp write pulse width min 45 50 60 70 ns t whwl t wph write pulse width high min 30 ns t whwh1 t whwh1 programming operation (notes 1, 2) byte typ 5 s word typ 7 t whwh2 t whwh2 sector erase operation (notes 1, 2) typ 0.7 sec t vcs v cc setup time min 50 s t rb recovery time from ry/by# min 0 ns t busy program/erase valid to ry/by# delay max 200 ns
data sheet 32 am29sl800d 27546a7 february 23, 2009 ac characteristics oe# we# ce# v cc data addresses t ds t ah t d t wp pd t whwh1 t wc t as t wph t vcs 555h pa pa read status data (last two cycles) a0h t cs status d out program command sequence (last two cycles) ry/by# t rb t busy t ch pa notes: 1. pa = program address, pd = program data, d out is the true data at the program address. 2. illustration shows device in word mode. figure 17. program operation timings
data sheet february 23, 2009 27546a7 am29sl800d 33 ac characteristics oe# ce# addresses v cc we# data 2aah sa t ah t w t wc t as t wp 555h for chip erase 10 for chip erase 30h t d t vcs t cs t d 55h t ch in progress complete t whwh va va erase command sequence (last two cycles) read status data ry/by# t rb t busy notes: 1. sa = sector address (for sector erase), va = valid address for reading status data (see ?write operation status?). 2. illustration shows device in word mode. figure 18. chip/sector er ase operation timings
data sheet 34 am29sl800d 27546a7 february 23, 2009 ac characteristics we# ce# oe# high z t oe high z dq7 dq0?dq6 ry/by# t busy complement tr u e addresses va t oeh t ce t ch t oh t df va va status data complement status data tr u e valid data valid data t acc t rc note: va = valid address. illustration shows firs t status cycle after command sequence, la st status read cycle, and array data read c ycle. figure 19. data# polling timings (during embedded algorithms) we# ce# oe# high z t oe dq6/dq2 ry/by# t bus addresses va t oeh t ce t ch t oh t df va va t acc t rc valid data valid status valid status (first read) (second read) (stops toggling) valid status va note: va = valid address; not required for dq6. il lustration shows first two status cycle a fter command sequence, last status read cy cle, and array data read cycle. figure 20. toggle bit timings (during embedded algorithms)
data sheet february 23, 2009 27546a7 am29sl800d 35 ac characteristics note: the system may use ce# or oe# to toggle dq2 and dq6. dq2 toggl es only when read at an address within an erase-suspended sector. figure 21. dq2 vs. dq6 erase erase erase suspend read erase suspend read erase we# dq6 dq2 suspend program enter embedded erasing erase suspend enter erase suspend program erase resume erase complete table 14. temporary sector unprotect parameter all speed options jedec std description unit t vidr v id rise and fall time min 500 ns t rsp reset# setup time for temporary sector unprotect min 4 s reset# t vidr 10 v 0 or 1.8 v ce# we# ry/by# t vidr t rsp program or erase command sequence 0 or 1.8 v figure 22. temporary sector unprotect timing diagram
data sheet 36 am29sl800d 27546a7 february 23, 2009 ac characteristics sector protect: 150 s sector unprot ect: 15 ms 1 s reset# sa, a6, a1, a0 data ce# we# oe# 60h 60h 40h valid* valid* valid* status sector protect/unprotect verify v id v ih * for sector protect, a6 = 0, a1 = 1, a0 = 0. for sector unprotect, a6 = 1, a1 = 1, a0 = 0. figure 23. sector protect/u nprotect timing diagram
data sheet february 23, 2009 27546a7 am29sl800d 37 ac characteristics notes: 1. not 100% tested. 2. see the ?erase and programming performance? section for more information. table 15. alternate ce# controlled erase/program operations parameter description speed options jedec std -90 -100 -120 -150 unit t avav t wc write cycle time (note 1) min 90 100 120 150 ns t avel t as address setup time min 0 ns t elax t ah address hold time min 45 50 60 70 ns t dveh t ds data setup time min 45 50 60 70 ns t ehdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghel t ghel read recovery time before write (oe# high to we# low) min 0 ns t wlel t ws we# setup time min 0 ns t ehwh t wh we# hold time min 0 ns t eleh t cp ce# pulse width min 45 50 60 70 ns t ehel t cph ce# pulse width high min 30 ns t whwh1 t whwh1 programming operation (notes 1, 2) byte typ 5 s word typ 7 t whwh2 t whwh2 sector erase operation (notes 1, 2) typ 0.7 sec
data sheet 38 am29sl800d 27546a7 february 23, 2009 ac characteristics t ghel t ws oe# ce# we# reset# t ds data t ah addresses t dh t cp dq7# d out t wc t as t cph pa data# polling a0 for program 55 for erase t rh t whwh1 or 2 ry/by# t wh pd for program 30 for sector erase 10 for chip erase 555 for program 2aa for erase pa for program sa for sector erase 555 for chip erase t bus notes: 1. pa = program address, pd = program data, dq7# = complement of the data written, d out = data written 2. figure indicates the last two bus cycles of command sequence. 3. word mode address used as an example. figure 24. alternate ce# controlled write operation timings
data sheet february 23, 2009 27546a7 am29sl800d 39 erase and programming performance notes: 1. typical program and erase times assume the following conditions: 25 c, 2.0 v v cc , 1,000,000 cycles. additiona lly, programming typicals assume checkerboard pattern. 2. under worst case conditions of 90c, v cc = 1.8 v, 1,000,000 cycles. 3. the typical chip programming time is cons iderably less than the maximum chip progra mming time listed, since most bytes progra m faster than the maximum program times listed. 4. in the pre-programming step of the embedded erase algorit hm, all bytes are programmed to 00h before erasure. 5. system-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. see table 5 for further information on command definitions. 6. the device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles. includes all pins except v cc . test conditions: v cc = 1.8 v, one pin at a time. notes: 1. sampled, not 100% tested. 2. test conditions t a = 25c, f = 1.0 mhz. table 16. erase and programming performance parameter typ (note 1) max (note 2) unit comments sector erase time 0.7 15 s excludes 00h programming prior to erasure (note 4) chip erase time 14 s byte programming time 5 150 s excludes system level overhead (note 5) word programming time 7 210 s chip programming time (note 3) byte mode 5.3 16 s word mode 3.7 11 s table 17. latchup characteristics description min max input voltage with respect to v ss on all pins except i/o pins (including a9, oe#, and reset#) ?1.0 v 11.0 v input voltage with respect to v ss on all i/o pins ?0.5 v v cc + 0.5 v v cc current ?100 ma +100 ma table 18. tsop pin capacitance parameter symbol parameter description test setup typ max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8.5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf table 19. data retention parameter test conditions min unit minimum pattern data retention time 150 c 10 years 125 c 20 years
data sheet 40 am29sl800d 27546a7 february 23, 2009 physical dimensions ts 048?48-pin standard tsop dwg rev aa; 10/99
data sheet february 23, 2009 27546a7 am29sl800d 41 physical dimensions fba048?48-ball fine-pitch ball grid array (fbga) 8.15 x 6.15 mm package dwg rev af; 10/99
data sheet 42 am29sl800d 27546a7 february 23, 2009 physical dimensions fbc048?48-ball fine-pitch ball grid array (fbga) 9 x 8 mm package dwg rev af; 10/99
data sheet february 23, 2009 27546a7 am29sl800d 43 physical dimensions vbk048?48 ball fine-pitch ball grid array (fbga) 8.15 x 6.15 mm 3338 \ 16-038.25b notes : 1. dimensioning and tolerancing per asme y14.5m-1994. 2. all dimensions are in millimeters . 3. ball position designation per jesd 95-1, spp-010 (excep t as noted). 4. e represents the solder ball grid pitch . 5. symbol "md" is the ball row m atrix size in the "d" direction. symbol "me" is the ball colum n matrix size in the "e" direction. n is the total number of solder balls. 6 dimension "b" is measured at the maximum ball diameter in a plane parallel to datum c. 7 sd and se are measured with respect to datums a and b and define the position of the center solder ball in the outer row. when there is an odd number of solder balls in the outer row parallel to the d or e dimension, respectively, sd or se = 0.000. when there is an even number of solder balls in the outer row, sd or se = e/ 2 8. not used . 9. "+" indicates the theoretical center of depopulated b alls. 10 a1 corner to be identified by chamfer, laser or ink mark, metallized mark indentation or other means. package vbk 048 jedec n/a 8.15 mm x 6.15 mm nom packag e symbol min nom max not e a --- --- 1.00 overall thickness a1 0.18 --- --- ball height a2 0.62 --- 0.76 body thickness d 8.15 bsc. body size e 6.15 bsc. body size d1 5.60 bsc. ball footprint e1 4.00 bsc. ball footprint md 8 row matrix size d direction me 6 row matrix size e direction n 48 total ball count fb 0.35 --- 0.43 ball diameter e 0.80 bsc. ball pitch sd / se 0.40 bsc. solder ball placemen t --- depopulated solder balls side view top view seating plan e a2 a (4x) 0.10 10 d e c 0.10 a1 c b a c 0.08 bottom view a1 corner b a m f 0.15 c m 7 7 6 e se sd 6 5 4 3 2 a b c d e f g 1 h fb e1 d1 c f 0.08 pin a1 corner index mark
data sheet 44 am29sl800d 27546a7 february 23, 2009 revision summary revision a (febr uary 4, 2003) initial release. revision a+1 (march 17, 2003) ordering information corrected typo in table. corrected typo to opns. revision a+2 (june 10, 2004) ordering information added pb-free package opns. revision a+3 (o ctober 27, 2004) updated v cc values revision a+4 (april 27, 2005) added vbk048 package. added colophon. updated trademark. revision a+5 (febr uary 17, 2006) global removed reverse tsop throughout. revision a6 (january 23, 2007) erase and program operations table changed t busy to a maximum specification. revision a7 (february 23, 2009) global added obsolescence information. colophon the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limita- tion, ordinary industrial use, general o ffice use, personal use, and household use, but are not designed, developed and manufac tured as con- templated (1) for any use that includes fatal risks or dangers th at, unless extremely high safety is secured, could have a seri ous effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic contro l, mass transport control, medical life support system, missile launch control in we apon system), or (2) for any use where chance of failure is intolera ble (i.e., submersible repeater and artifici al satellite). please note that spansion inc. will not be liable to you and/or any third party for any claims or damages arisi ng in connection with above-mentioned uses of the products. any se miconductor devices have an inherent chance of failure. you must protect agains t injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and pr evention of over-current levels and other abnormal operating conditions. if any products described in this document represent goods or technologies subject to certain restrictions on expor t under the foreign exchange and foreign trade law of japan, the us export administra tion regulations or the applicable laws of any other country, the prior au- thorization by the respective government entit y will be required for export of those products. trademarks copyright ? 2003?2005 advanced micro devices, inc. all rights reserv ed. amd, the amd logo, and combinations thereof are registe red trade- marks of advanced micro devices, inc. expressflash is a trademar k of advanced micro devices, inc. product names used in this pu blication are for identification purposes only and may be tr ademarks of their respective companies. copyright ? 2006?2009 spansion inc. all rights reserved. spansion ? , the spansion logo, mirrorbit ? , mirrorbit ? eclipse ? , ornand ? , ornand2 ? , hd-sim ? , ecoram ? and combinations thereof, are trademarks of spansi on llc in the us and other countries. other names used are for informational purposes only and ma y be trademarks of their respective owners.

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